PART |
Description |
Maker |
HN1D03FU07 HN1D03FU |
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
HN1D02FE |
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
KDS160 |
SILICON EPITAXIAL PLANAR TYPE DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC(Korea Electronics)
|
HN1D02FU07 HN1D02FU |
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
UPA814 UPA814TC UPA814TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC[NEC]
|
UPA835 UPA835TC UPA835TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
|
NEC Corp. NEC[NEC]
|
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
1SS360F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
|
TOSHIBA
|
HN1D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|